? 2007 ixys corporation all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c55v v dgr t j = 25 c to 175 c; r gs = 1 m 55 v v gsm transient 20 v i d25 t c = 25 c 140 a (combined die total = 280 a) i lrms package current limit, rms 75 a (combined die total = 150 a) i dm t c = 25 c, pulse width limited by t jm 650 a i as t c = 25 c25a e as t c = 25 c 1.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 3 v/ns t j 175 c, r g = 3.3 p d t c = 25 c 150 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c plastic body for 10 seconds 260 c v isol 50/60 hz, t = 1 minute, i isol < 1 ma, rms 2500 v . f c mounting force 30..170 / 7..36 n/lb. weight package 9 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a55v v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v i gss v gs = 20 v, v ds = 0 v 200 na i dss v ds = v dss 5 a v gs = 0 v t j = 150 c 250 a r ds(on) v gs = 10 v, i d = 50 a, note 1, 2 4.4 m n-channel enhancement mode avalanche rated IXTL2X240N055T v dss =55v i d25 = 2x140 a r ds(on) 4.4 m ds99721 (01/07) g = gate d = drain s = source isoplus i5-pak tm (ixtl) isolated back surface d s g s d all ratings and parametric values are per each mosfet die unless otherwise specified. trenchmv tm power mosfets common-gate pair (electrically isolated back surface) dd sg s r g r g features ultra-low on resistance unclamped inductive switching (uis) rated low package inductance - easy to drive and to protect 175 c operating temperature advantages easy to mount space savings high power density applications automotive - motor drives - high side switch - 12v battery - abs systems dc/dc converters and off-line ups primary- side switch high current switching applications advance technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXTL2X240N055T notes: 1. pulse test, t 300 s, duty cycle d 2 %; 2. drain and source kelvin contact must be located less than 5 mm from the plastic body. symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 60 a, note 1 80 132 s r g 3 c iss 7600 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1240 pf c rss 260 pf t d(on) 40 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 25a 54 n s t d(off) r g = 5 (external) 63 ns t f 75 ns q g(on) 170 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 25a 32 nc q gd 48 nc r thjc 1.0 c/w r thcs 0.25 c/w source-drain diode characteristic values t j = 25 c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 240 a i sm pulse width limited by t jm 650 a v sd i f = 50 a, v gs = 0 v, note 1 1.0 v t rr i f = 25 a, -di/dt = 100 a/ s40ns v r = 30 v, v gs = 0 v isoplus i5-pak tm (ixtl) outline ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2 7,071,537 note: 1. tab 6 - electrically isolated from the other pins. 2. all leads and tab are tin plated. leads: 1, 5: drain 2, 4: source 3: gate 6. isolated advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
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